ds30148 rev. 4 - 2 1 of 2 BAV756DW www.diodes.com diodes incorporated BAV756DW quad surface mount switching diode array case: sot-363, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 polarity: see diagram marking: kca, see page 2 weight: 0.006 grams (approx.) ordering information: see page 2 mechanical data a m j l d b c h k g f top view c 1 a 2 a 1 a 1 c 2 c 2 features fast switching speed ultra-small surface mount package for general purpose switching applications high conductance one bav70 circuit and one baw56 circuit in one package easily connected as full wave bridge characteristic symbol value unit non-repetitive peak reverse voltage v rm 100 v peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 75 v rms reverse voltage v r(rms) 53 v forward continuous current (note 1 and 3) i fm 300 ma average rectified output current (note 1 and 3) i o 150 ma non-repetitive peak forward surge current @ t = 1.0 s @ t = 1.0s i fsm 2.0 1.0 a power dissipation (note 1 and 3) p d 200 mw power dissipation t s = 60 c (note 3) p d 300 mw thermal resistance junction to ambient air (note 1 and 3) r ja 625 c/w thermal resistance junction to soldering point (note 3) r js 275 c/w operating and storage temperature range t j ,t stg -65 to +150 c maximum ratings @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition reverse breakdown voltage (note 2) v (br)r 75 v i r = 2.5 a forward voltage (note 2) v f 0.715 0.855 1.0 1.25 v i f = 1.0ma i f = 10ma i f = 50ma i f = 150ma reverse current (note 2) i r 2.5 50 30 25 a a a na v r = 75v v r = 75v, t j = 150 c v r = 25v, t j = 150 c v r = 20v total capacitance c t 2.0 pf v r = 0, f = 1.0mhz reverse recovery time t rr 4.0 ns i f = i r = 10ma, i rr = 0.1 x i r ,r l = 100 electrical characteristics @ t a = 25 c unless otherwise specified t c u d o r p w e n sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm notes: 1. device mounted on fr-4 pc board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. short duration test pulse used to minimize self-heating effect. 3. one or more diodes loaded.
notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. ds30148 rev. 4 - 2 2 of 2 BAV756DW www.diodes.com t c u d o r p w e n 0.1 1 0.01 0.001 0 1.5 1.0 0.5 i , instantane o us f o rward current (a) f v , instantaneous forward voltage (v) f fig. 1 forward characteristics t = -40oc a t = 150oc a t = 75oc a t = 25oc a t = 0oc a month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key kca = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september kca ym marking information device packaging shipping BAV756DW-7 sot-363 3000/tape & reel (note 3) ordering information year 2001 2002 2003 2004 2005 2006 2007 2008 2009 code mnpr stuvw 0.1 1 10 100 1000 10000 0 20 40 60 80 100 v , instantaneous reverse voltage (v) r fig. 2 typical reverse characteristics i , instantane o us reverse current (na) r t = -40oc a t = 25oc a t = 75oc a t = 125oc a t = 150oc a t = 0oc a 0.0 0.2 0.4 0.6 0.8 1.8 1.6 1.4 1.2 1.0 2 . 0 0 10 20 40 30 c , total capacitance (pf) t v , reverse voltage (v) r fi g . 3 t y pical capacitance vs. reverse volta g e f = 1.0mhz 0 50 100 150 200 250 25 050 75 100 125 150 p , power dissipation (mw) d t , ambient temperature ( c) a fi g . 4 power deratin g curve, note 1 300
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